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Silicon Test Die
Wire Bondable Patterns |
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| Silicon Die with Daisy Chain |
Nbr Pads |
Description |
Pad Size |
Size (mm) |
Die Material |
Metalization |
Tray Qty |
Part Number |
Fig. |
| 8 pairs |
Daisy Chain |
60 x 160µm |
1.0 x 1.0mm
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Si |
Al |
100 |
TD8-1.0-DC |
1 |
| 16 pairs |
Daisy Chain |
60 x 160µm |
2.5 x 2.5mm
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Si |
Al |
100 |
TD16-2.5-DC |
2 |
| 24 pairs |
Daisy Chain |
60 x 360µm |
4.0 x 4.0mm
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Si |
Al |
64 |
TD24-4.0-DC |
3 |
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| Specs: Die Thickness 250µm • Al Metallization 1.0µm over 0.75µm SiO2 • Passivation = None
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| Silicon Die with Isolated Pads |
| Nbr Pads |
Description |
Pad Size |
Size (mm) |
Die Material |
Metalization |
Tray Qty |
Part Number |
Fig. |
| 16 |
Isolated Pad |
60µm SQ. |
1.0 x1.0mm
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Si |
Al |
100 |
TD16-1.0-ISO |
4 |
| 32 |
Isolated Pad |
60µm SQ. |
2.5 x 2.5mm
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Si |
Al |
100 |
TD32-2.5-ISO |
5 |
| 48 |
Isolated Pad |
60µm SQ. |
4.0 x 4.0mm
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Si |
Al |
64 |
TD48-4.0-ISO |
6 |
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| Specs: Die Thickness 250µm • Al Metallization 1.0µm over 0.75µm SiO2 • Passivation = None
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| Silicon Die with Differential Pairs for RF/Microwave Parasitic Test |
| Nbr Pads |
Description |
Pad Size |
Size (mm) |
Die Material |
Metalization |
Tray Qty |
Part Number |
Fig. |
2 Pads With Ground |
Differential Pair |
Pad 60 x 160µm Grnd 1000µm SQ. |
1.0 x1.0mm
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Si |
Al |
100 |
TD2-1.0-DIF |
7 |
2 Pads With Ground |
Differential Pair |
Pad 60 x 160µm Grnd 2500µm SQ. |
2.5 x 2.5mm
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Si |
Al |
100 |
TD2-2.5-DIF |
8 |
2 Pads With Ground |
Differential Pair |
Pad 60 x 160µm Grnd 4000µm SQ. |
4.0 x 4.0mm
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Si |
Al |
64 |
TD2-4.0-DIF |
9 |
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| Specs: Die Thickness 250µm • Al Metallization 1.0µm over 0.75µm SiO2 • Passivation = None
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Differential Pair Pad Patterns (Not to Scale) |
| Fig. 7 |
Fig. 8 |
Fig. 9 |
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TD2-1.0-DIF 1.0 x 1.0mm 151002 (A4) |
TD2-2.5-DIF 2.5 x 2.5mm 152502 (B4) |
TD2-4.0-DIF 4.0 x 4.0mm 154002 (C2) |
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| Silicon Die with Full Metallization |
| Nbr Pads |
Description |
Pad Size |
Size (mm) |
Die Material |
Metalization |
Tray Qty |
Part Number |
Fig. |
| 1 Large Pad |
Fully Metallized |
1000µm SQ. |
1.0 x1.0mm
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Si |
Al |
100 |
TD1-1.0-BUS |
10 |
| 1 Large Pad |
Fully Metallized |
2500µm SQ. |
2.5 x 2.5mm
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Si |
Al |
100 |
TD1-2.5-BUS |
11 |
| 1 Large Pad |
Fully Metallized |
4000µm SQ. |
4.0 x 4.0mm
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Si |
Al |
64 |
TD1-4.0-BUS |
12 |
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| Specs: Die Thickness 250µm • Al Metallization 1.0µm over 0.75µm SiO2 • Passivation = None
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| JEDEC Moisture Sensitivity Level MSL-1 |
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Mirror Semiconductor, Inc.
17595 Harvard Ave, Suite 509
Irvine, CA 92614, USA
Toll Free USA/Canada (866) 404-8800
Email: Info@MirrorSemi.com
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